Publications 2013
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Transition metal nitride thin films grown by MOCVD using amidinato based complexes [M(NtBu)2{(iPrN)2CMe}2] (M = Mo, W) as precursors
N. B. Srinivasan, T. Thiede, T. de los Arcos, V. Gwildies, M. Krasnopolski, H.-W. Becker, D. Rogalla, A. Devi, R. A. Fischer,
Surf. Coat. Technol.
2013,
230,
130
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Intrinsic Nitrogen-doped CVD-grown TiO2 Thin Films from All-N-coordinated Ti Precursors for Photoelectrochemical Applications
S. Kim, K. Xu, H. Parala, R. Beranek, M. Bledowski, K. Sliozberg, H.-W. Becker, D. Rogalla, D. Barreca, C. Maccato, C. Sade, W. Schuhmann, R. A. Fischer, A. Devi ,
Chem. Vap. Deposition
2013,
19(1-3),
45
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Homoleptic Gadolinium Amidinates as Precursors for MOCVD of Oriented Gadolinium Nitride (GdN) Thin Films
M. Krasnopolski, C. G. Hrib, R. W. Seidel, M. Winter, H.-W. Becker, D. Rogalla, R. A. Fischer, F. T. Edelmann, A. Devi ,
Inorg. Chem.
2013,
52(1),
286
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Atomic layer deposition of Er2O3 thin films from Er tris-guanidinate and water: process optimization, film analysis and electrical properties
K. Xu, A. R. Chaudhuri, H. Parala, D. Schwendt, T. de los Arcos, H.-J. Osten, A. Devi,
J. Mater. Chem. C
2013,
1(25),
3939
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A Z’ = 6 crystal structure of (E)-N,N’-dicyclohexylacetamidine
M. Krasnopolski, R. W. Seidel, R. Goddard, J. Breidung, M. Winter, A. Devi, R. A. Fischer,
J. Mol. Struct.
2013,
1031,
239
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[Zr(NEtMe)2(guan-NEtMe)2] as a Novel Atomic Layer Deposition Precursor: ZrO2 Film Growth and Mechanistic Studies
T. Blanquart, J. Niinisto, N. Aslam, M. Banerjee, Y. Tomczak, M. Gavagnin, V. Longo, E. Puukilainen, H. D. Wanzenboeck, W. M. M. Kessels, A. Devi, S. Hoffmann-Eifert, M. Ritala, M. Leskelae,
Chem. Mater.
2013,
25(15),
3088