Group photo 2019
Welcome to the homepage of the research group “Inorganic Materials ChemistryIMC of Prof. Dr. Anjana Devi. Our group focuses on the development, synthesis and evaluation of high-performance precursors for vapor phase deposition processes namely chemical vapor deposition (CVD), atomic layer deposition (ALD) and molecular layer deposition (MLD).
We collaborate with scientists from various disciplines (Physics, Chemistry and Engineers) and our goal is to develop nanostructured materials for different applications ranging from microelectronics, sensors, dielectrics, barrier coatings, spintronics, optics, catalysis etc.


New publication
7. June 2021

Cobalt Metal ALD: Understanding the Mechanism and Role of Zinc Alkyl Precursors as Reductants for Low Resistivity Co Thin Films

D. Zanders, J. Liu, J. Obenlüneschloß, C. Bock, D. Rogalla, L. Mai, M. Nolan, S. T. Barry, A.Devi
Chem. Mater, 2021, accepted manusctipt
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New publication
30. May 2021

Direct liquid injection chemical vapor deposition of ZrO2 films from a heteroleptic Zr precursor: Interplay between film characteristics and corrosion protection of stainless steel

S. M. J. Beer, D. Samelor, A. Abdel Aal, J. Etzkorn, D. Rogalla, A. E. Turgambaeva, J. Esvan, A. Kostka, C. Vahlas, A. Devi
J. Mater. Res. Technol., 2021, 13, 1599-1614.
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New publication
30. April 2021

Investigation of an atomic-layer-deposited Al2O3 diffusion barrier between Pt and Si for the use in atomic scale atom probe tomography studies on a combinatorial processing platform

Y. Li, D. Zanders, M. Meischein, A. Devi, A. Ludwig
Surf. Interface Anal., 2021, 1-7
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New publication
22. March 2021

(tBuN)SiMe2NMe2 – A new N,N’-Κ2-monoanionic ligand for atomic layer deposition precursors

M. B. E. Griffiths, D. Zanders, M. A. Land, J. D. Masuda, A. Devi, S. T. Barry
J. Vac. Sci. Technol., A, 2021, 39, 032409.
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25. February 2021

New master student on board


We welcome Marcel Schmickler joining our IMC team as a new Master student.
He will be working on synthesis and characterization of lanthanide precursors.
We wish him a productive research stay!

25. January 2021

Congratulations to Anjana

The Royal Society of Chemistry (RSC) journal “Dalton Transactions” has nominated Anjana to the Editorial Advisory Board effective from January 2021 in recognition of her contributions towards the research areas of Inorganic and Materials Chemistry.
A further motivation for all of us!
The IMC team wishes her more success in her future research career!

7. January 2021

Santa brought a present for Anjana

Thanks to my “Kindergarten” for the beautiful Christmas gift.
You guys are my motivation to carry on doing high-quality research!
Keep up the spirit!

6. January 2021

New Cover page

Check out our new cover feature in Chem. Eur. J. designed by our PhD student Parmish Kaur which demonstrates a water assisted ALD process of CeO2 thin films. The background picture was taken by herself during a flight. The paper is a successful outcome of the EU-ITN-HYCOAT project collaborating with Tyndall National institute (Ireland), Aalto University (Finland) and RUB. Check out the full story on rationally developed precursor chemistry for cerium, DFT modelling and ALD of CeO2 by clicking on the picture below.

Cover Page ChemComm
21. December 2020

Merry Christmas and a Happy New Year!

What a year! So far, our group was lucky dodging the Corona virus and everybody is healthy which is most important.
Despite the challenging situation in terms of organizing and mastering lab work and home office, we had a successful year 2020.
We especially would like to thank all our cooperation partners for the fruitful collaborations supporting our fundamental research on precursor development and thin film fabrication.

Merry Christmas and a Happy New Year 2021!
Stay healthy!

Group photo 2020 December
New publication

Atomic layer deposition of dielectric Y2O3 thin films from a homoleptic yttrium formamidinate precursor and water

N. Boysen, D. Zanders, T. Berning, S. M. J. Beer, D. Rogalla, C. Bock, A. Devi, RSC Adv., 2021, 11, 2565-2574.
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