Fields of Research

Our group focuses on the development of metal-organic complexes suitable as precursors for the fabrication of thin film materials via chemical vapor deposition (CVD), atomic layer deposition (ALD) and chemical solution deposition (CSD).
Through the implementation of our precursors, the design of improved thin film processes for material systems of all kinds are accessible allowing the fabrication and investigation of these thin films in a multitude of different technological fields such as electronics, gas-barriers or sensors.


Please find below an excerpt of our current research topics.

Direct MOCVD growth of metal sulfides

  • Rare-earth sulfide (RES) and transition metal disulfide (TMDS) thin films are deposited using a rational developed metal-organic chemical vapor deposition (MOCVD) process. The fabricated thin films are characterized in terms of their functional properties including optical, magnetic and electronic properties for potential use in future devices (sensors, lasers, photovoltaics etc.).

Precursor design, evaluation and application towards high-performance SnO2 thin films

  • Our collaboration within the EFRE project “FUN ALD” has enlarged the synthetical scope of the Devi Group. Thin films of the inorganic material SnO2 are known for their outstanding performance in numerous devices such as gas sensors. We contribute to “FUN ALD” by designing new Sn containing precursors and developing ALD and PE-ALD processes for these compounds. Moreover, the fabrication of SnO2 containing TFTs is pursued in ongoing research which came into being alongside.

Precursor development for the atomic layer deposition (ALD) of metal thin films

  • The deposition of highly conformal, continuous and ultra-thin metal films via ALD still remains a challenge. The precursor chemistry and ALD process management play a key role to yield continuous and conformal metal films. To overcome this challenge, suitable precursors for the ALD of copper and silver thin films with exceptional thermal stability and reactivity are tailored within this project, while an adequate metal ALD process is developed for each precursor.

Copper tungstate and antimony doped gallium nitride nanostructures for the fabrication of photoanodes in photoelectrochemical tandem devices via chemical vapor deposition

  • Within this project, funded by the german research foundation (DFG, Schwerpunktprojekt 1613), we aim to develop new photoanode absorber materials, for tandem photoelectrochemical devices. In this pursuit, we are specifically tackling the chemical vapor deposition (CVD) of nanostructures of two selected material candidates, namely copper tungstate (CuWO4) and Sb-doped gallium nitride (Ga(Sbx)N1-x). The identification of suitable precursors, by means of thermal characteristics, as well as the evaluation of the fabricated thin films, towards structure, morphology and composition is the main focus. Finally, the photoelectrochemical performances of the fabricated photoanodes, as well as the charge carrier properties are investigated by our project partners.

Precursor development for ALD/MLD processes for highly functional inorganic/organic hybrid materials

  • Combining inorganic with organic molecules in a thin film, in order to obtain properties of both compounds, can be achieved with atomic/molecular layer deposition. The task is to find inorganic precursor molecules that are reactive toward the surface and an organic reactant at the same time. Therefore, the precursor chemistry of the group III metals (Al, Ga, In) as well as Zn and Sn will be tuned by introducing the ligand system 3-(dimethylamino)propyl (DMP) and combine it with known, already employed, ligands. The new, highly functionalized precursors will be tested in ALD/MLD processes with standard organic molecules in order to produce functional and flexible inorganic/organic hybrid material thin films.

Vapor phase routes toward the deposition of binary and ternary ferrite thin films

  • Due to their inherent low cost and toxicity binary and ternary ferrites have become of great interest for a plethora of applications. Especially for ternary materials the development of precursors with matching thermal properties is of great importance. In our group we are aiming to develop vapor phase processes and precursors for the fabrication of such materials. The fabricated thin films will be investigated with regard to their functional properties, ranging from optoelectronics and electrocatalysts or absorber materials in photoelectrodes to applications in supercapacitors.