Publications 2009

Publications 2009

• Homoleptic Gadolinium Guanidinate: A Single Source Precursor for Metal-Organic Chemical Vapor Deposition of Gadolinium Nitride Thin Films
  A. P. Milanov, T. Thiede, A. Devi, R. A. Fischer,
  J. Am. Chem. Soc. 2009, 131, 17062

• Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors
  A. P. Milanov, T. Toader, H. Parala, D. Barreca, A. Gasparotto, C. Bock, H.-W. Becker, D. K. Ngwashi, R. Cross, S. Paul, U. Kunze, R. A. Fischer, A. Devi,
  Chem. Mater. 2009, 21, 5443

• Zinc Malonate Based Precursors for MOCVD of ZnO
  D. Bekermann, D. Pilard, R. Fischer, and A. Devi,
  ECS Transactions 2009, 8, 601

• An integrated experimental and theoretical investigation on Cu(hfa)₂.TMEDA: structure, bonding and reactivity
  G. Bandoli, D. Barreca, A. Gasparotto, R. Seraglia, E. Tondello, A. Devi, R. A. Fischer, E. Fois, A. Gamba, G. Tabacchi,
  Physical Chemistry Chemical Physics 2009, 11, 5998

• Rare-earth based oxide and nitride thin films employing volatile homoleptic guanidinate precursors
  A. P. Milanov, T. Thiede, M. Hellwig, H. Parala, C. Bock, H.-W. Becker, D. K. Ngwashi, R. B. M. Cross, S. Paul, U. Kunze, R. A. Fischer, A. Devi,
  ECS Transactions 2009, 25, 143

• Investigation of niobium nitride and oxy-nitride films grown by MOCVD
  D. Bekermann, D. Barreca, A. Gasparotto, H. W. Becker, R. A. Fischer, A. Devi,
  Surf. Coatings and Technol. 2009, 204, 404

• MOCVD of gallium oxide thin films using homoleptic gallium complexes: Precursor evaluation and thin film characterization
  M. Hellwig, K. Xu, D. Barreca, A. Gasparotto, B. Niermann, J. Winter, H. W. Becker, D. Rogalla, R. A. Fischer, A. Devi,
  ECS Transactions 2009, 25, 617

• Tuning the thermal properties of hafnium precursors by tailoring the ligands
  K. Xu, A. P. Milanov, A. Devi,
  K. Xu, A. P. Milanov, A. Devi 2009, 25, 625

• Innovative M(hfa)₂TMEDA (M=Cu, Co) Precursors for the CVD of Copper-Cobalt Oxides: An integrated theoretical and experimental approach
  A. Gasparotto, D. Barreca, A. Devi, R. A. Fischer, E. Fois, A. Gamba, C. Maccato, R. Seraglia, G. Tabacchi, E. Tondello,
  ECS Transactions 2009, 25, 549

• Capacitance-Voltage Analysis of ZrO2 Thin films deposited by MOCVD techniques
  T. A. Mih, S.Paul, A. P. Milanov, R. Bhakta, A. Devi,
  ECS Transactions 2009, 25, 901

• Hafnium carbamates and ureates: new class of precursors for low-temperature growth of HfO2 thin films
  R. Pothiraja, A. Milanov, D. Barreca, A. Gasparotto, H. W. Becker, M. Winter, R. A. Fischer, A. Devi,
  Chem. Commun. 2009, 15, 1978

• Novel gallium complexes with malonic diester anions as molecular precursors for the MOCVD of Ga₂O₃ thin films
  M. Hellwig, K. Xu, D. Barreca, A. Gasparotto, M. Winter, E. Tondello, R. A. Fischer, A. Devi,
  Eur. J. Inorg. Chem. 2009, 8, 1110

• A cobalt(II) hexafluoroacetylacetonate ethylenediamine complex as CVD molecular source of cobalt oxides nanostructures
  G. Bandoli, D.Barreca, A.Gasparotto, C. Maccato, R. Seraglia, E. Tondello, A. Devi, R. A. Fischer, M. Winter,
  Inorg. Chem. 2009, 48, 82

• Monomeric malonate precursors for the MOCVD of HfO2 and ZrO2 thin films
  R. Pothiraja, A. Milanov, H. Parala, M. Winter, R. A. Fischer and A. Devi,
  Dalton Trans. 2009, 4, 654