Publications 1994-2008

Publications 1994-2008

Publications 2008

• Synthesis, characterization and thermal properties of homoleptic rare-earth guanidinates: Promising precursors for MOCVD and ALD of rare-earth oxide thin films
  A. Milanov, R. A. Fischer and A. Devi,
  Inorg. Chem. 2008, 47, 11405

• MOCVD of niobium nitrides and oxy-nitrides using an all-nitrogen-coordinated precursor: thin-film deposition and mechanistic study
  D. Bekermann, D. Barreca, A. Devi, A. Gasparotto, and R. A. Fischer,
  ECS Trans. 2008, 16, 235

Publications 2007

• Gd2O3 nanostructured thin films analyzed by XPS
  D. Barreca, A. Gasparotto, A. Milanov, E. Tondello, A. Devi, R. A. Fischer,
  Surf. Sci. Spectra 2007, 14, 60

• Nanostructured Dy2O3 films: an XPS investigation
  D. Barreca, A. Gasparotto, A. Milanov, E. Tondello, A. Devi, R. A. Fischer,
  Surf. Sci. Spectra 2007, 14, 52

• Hafnium oxide thin film grown by ALD: an XPS study
  D. Barreca, A. Milanov, R. A. Fischer, A. Devi, E. Tondello,
  Surf. Sci. Spectra 2007, 14, 34

• Stabilization of Amide-Based Complexes of Niobium and Tantalum Using Malonates as Chelating Ligands: Precursor Chemistry and Thin Film Deposition
  M. Hellwig, A. Milanov, D. Barecca, J.-L. Deborde, R. Thomas, M. Winter, U. Kunze, R. A. Fischer and A. Devi,
  Chem. Mater. 2007, 19, 6077

• Liquid injection MOCVD of TiO₂ and SrTiO₃ thin films from [Ti(OⁱPr)₂(tbaoac)₂]: Film properties and compatibility with [Sr(thd)₂]
  R. Thomas, R. Bhakta, P. Ehrhart, R. A. Fischer, R.Waser and A. Devi,
  Surface Coatings and Technology 2007, 201, 9135

• LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors
  . Milanov, R.Thomas, M. Hellwig, K. Merz, H.-W. Becker, P.Ehrhart, R. A. Fischer, R. Waser, and A. Devi,
  Surface Coatings and Technology 2007, 201, 9109

• Vaporizable metalorganic compounds for deposition of metals and metal-containing thin films
  A. Thenappan, J. Lao, H. K. Nair, A. Devi, R. Bhakta, A. Milanov,
  Patent : PCT Int. Appl. 2007, 58pp, CODEN: PIXXD2 WO 2007005088 A2 20070111 CAN 146:133962 AN 2007:33784

• Thin films of ZrO₂ for high-k applications employing engineered alkoxide and amide based MOCVD precursors
  R. Thomas, R. Bhakta, A. Milanov, A. Devi and P. Ehrhart,
  Chem. Vap. Deposition 2007, 13, 98

• Synthesis and characterisation of zirconium-amido guanidinato complex: A potential precursor for ZrO₂ thin films
  A. Devi, R, Bhakta, A. Milanov, M. Hellwig, D. Barreca, E. Tondello, R. Thomas, P.Ehrhart, M. Winter, and R. A. Fischer,
  Dalton Trans. 2007, 17, 1671

• Thin films of HfO₂ for high-k gate oxide applications from engineered alkoxide and amide based MOCVD precursors
  .Thomas, E. Rije, P. Ehrhart, A. Milanov, R. Bhakta, A. Bauneman, A. Devi, R. A. Fischer and R. Waser,
  J. Electrochem. Soc. 2007, 154, G77

• The synthesis of ZrO₂/SiO₂ nanocomposites by the two-step CVD of a volatile halogen-free Zr alkoxide in a fluidized-bed reactor
  W. Xia , Y. Wang, V. Hagen, A. Heel, G. Kasper, U. Patil, A. Devi, M. Muhler,
  Chem. Vap. Deposition 2007, 13, 37

• Investigation of Thermal Decomposition of the Titanium MOCVD Precursor [Ti(OⁱPr)₂(thd)₂], Employing Matrix Isolation-FTIR technique
  R. Bhakta, H. Bettinger, and A. Devi,
  ECS Transactions 2007, 2, 89

Publications 2006

• Metalorganic precursors for CVD and related techniques (ALD)
  A. Devi, R. Bhakta, A. Milanov,
  German Patent: DE 10 2005 030 915.1 and US Patent : US 60/696,072 2006,

• Guanidinate stabilized monomeric hafnium amide complexes as promising precursors for MOCVD of HfO₂
  A. Milanov, R. Bhakta, A. Baunemann, H. W. Becker, R. Thomas, P. Ehrhart, M. Winter and A. Devi,
  Inorganic Chemistry 2006, 46, 11008

• Precursor chemistry for TiO₂: Titanium complexes with mixed nitrogen/oxygen ligand sphere
  A. Baunemann, M. Hellwig, A. Varade, R. Bhakta, M. Winter, S. A. Shivashankar, R. A. Fischer, and A. Devi,
  Dalton Trans. 2006, 28, 3485

• Liquid injection MOCVD of ZrO₂ thin films using zirconium bis (diethylamido)bis(di-tert-butylmalonato) as a novel precursor
  R. Thomas, A. Milanov, R. Bhakta, U. Patil, M. Winter, P. Ehrhart, R. Waser and A. Devi,
  Chem. Vap. Deposition 2006, 12, 295

• MOCVD of ZrO₂ and HfO₂ thin films from modified monomeric precursors
  U. Patil, R. Thomas, A. Milanov, R. Bhakta, P. Ehrhart, R. Waser, R. Becker, H.-W. Becker, M. Winter, K. Merz, R. A. Fischer and A. Devi,
  Chem. Vap. Deposition 2006, 12, 172

• Mixed amide malonate compound of hafnium as a novel monomeric precursor for MOCVD of HfO2 thin films
  A. Milanov, R. Bhakta, R. Thomas, P. Ehrhart, M. Winter, R. Waser, A. Devi,
  J. Mater. Chem. 2006, 16, 437

Publications 2005

• High-k dielectric materials by metalorganic chemical vapor deposition: Growth and characterization
  R. Thomas, S. Regnery, P. Ehrhart , R. Waser, R. Bhakta, U. Patil, A. Devi,
  Ferroelectrics 2005, 327, 111

• Materials chemistry of group-13 nitrides
  A. Devi, R. Schmid, J. Müller, R. A. Fischer,
  Topics in Organometallic Chemistry 2005, 9, 49

• Synthesis and structure of Bis(2-butyl-N,N’-diisopropylamidinateo)dichloro-hafnium(IV)
  A. Milanov, R. Bhakta, M. Winter, K. Merz, A. Devi,
  Acta Cryst. C 2005, 61, m 370

• Metal-Organic CVD of conductive and crystalline hafnium nitride films
  Y. Kim, A. Baunemann, H. Parala, A. Devi, R. A. Fischer,
  Chem. Vap. Deposition 2005, 11, 294

• Zirconium dioxide thin films for high-k applications by MOCVD from novel mononuclear precursors
  R. Thomas, U. Patil, P. Ehrhart, A. Devi, R. Waser,
  Proc. Electrochem. Soc. 2005, 944

• Volatile single source precursors for the MOCVD of metal silicate thin films
  U. Patil, H.-W. Becker, M. Winter, R. A. Fischer, A. Devi,
  Proc. Electrochem. Soc. 2005, 913

• Selective growth of tantalum nitride and hafnium nitride thin films on OTS patterned Si(100) substrates by MOCVD method
  B. C. Kang, A. Baunemann, Y. Kim, J. H. Lee, D. Y. Jung, A. Devi, H. Parala, R. A. Fischer, J. H. Boo,
  Proc. Electrochem. Soc. 2005, 326

• MOCVD of TiO2 thin films on OTS modified Si(100) substrates by micro-contact printing: Selective growth and new characterisation technique with micro-Raman spectroscopy
  B. C. Kang, J. H. Lee, D. Y. Jung, J. H. Boo, A. Devi, R. Bhakta, R. A. Fischer, S. H. Hong,
  Proc. Electrochem. Soc. 2005, 320

• Gas phase decomposition studies on the MOCVD precursor [Ti(OC₃H₇)]₄] using matrix-isolation FTIR spectroscopy
  R. Bhakta, E. Gemel, J. Müller, A. Devi,
  Proc. Electrochem. Soc. 2005, 312

Publications 2004

• Precursor engineering and evaluation: Studies on the nature of molecular mechanisms involved in the MOCVD of TiO₂ thin films
  R. Bhakta, R. Thomas, F. Hipler, H. Bettinger, J. Müller, P. Ehrhart, A. Devi,
  J. Mater. Chem. 2004, 14, 3231

• Mononuclear precursor for MOCVD of HfO₂ thin films
  A. Baunemann, R. Becker, M. Winter, R. A. Fischer, R. Thomas, P. Ehrhart, R. Waser, A. Devi,
  Chem. Commun. 2004, 14, 1610

Publications 2003

• MOCVD of copper films from copper ethylacetoacetate: Experiment and thermodynamic analysis
  S. Mukhopadhyay, K. Shalini, A. Devi, S. A. Shivashankar,
  Proc. Electrochem. Soc. 2003, 2, 1275

• Nanostructures of group-III nitrides by MOCVD using molecular precursors
  J. Khanderi, A. Wohlfart, H. Parala, A. Devi, R. A. Fischer,
  Proc. Electrochem. Soc. 2003, 2, 1098

• MOCVD of TiO₂ thin films using a new class of metalorganic precursors
  R. Bhakta, U. Patil, A. Devi,
  Proc. Electrochem. Soc. 2003, 2, 1477

• Zinc amide compounds as potential precursors for the synthesis of zinc nitride
  E. Maile, A. Devi, R. A. Fischer,
  Proc. Electrochem. Soc. 2003, 2, 975

• A study on the metalorganic chemical vapor deposition of pure copper films from low cost copper(II) ) dialkylamino-2-propoxides: Tuning the thermal properties of the precursor by small variations of the ligand
  R. Becker, A. Devi, J. Weiß, U. Weckenmann, M. Winter, C. Kiener, H. W. Becker, R. A. Fischer,
  Chem. Vap. Deposition 2003, 9, 149

• MOCVD of gallium nitride nanostructures using (N₃)₂Ga{(CH₂)₃NR₂} R=Me, Et as single molecule precursor: Morphology control and materials characterization
  J. Khanderi, A. Wohlfart, H. Parala, A. Devi, J. Hambrock, A. Birkner, R. A. Fischer,
  J. Mater. Chem. 2003, 13, 1438

• Mononuclear mixed-ketoester-alkoxide compound of Ti as a promising precursor for MOCVD of TiO2 thin films
  R. Bhakta, S. Regnery, F. Hipler, M. Winter, P. Ehrhart, R. Waser, A. Devi,
  Chem. Vap. Deposition 2003, 9, 295

• Organische Puffer machen Metalloxide flüssig: Chemische Verpackungskünste für neue Computerchips
  A. Devi,
  ChemieRubin 2003, 56

• Synthesis and structure of mixed isopropoxide-ß-ketoester and ß-ketoamide zirconium complexes: Potential precursors for MOCVD of ZrO₂
  U. Patil, M. Winter, H. W. Becker, A. Devi,
  J. Mater. Chem. 2003, 13, 2177

Pubikationen 2002

• Thermodynamic investigation of the MOCVD of Cu films from bis(2,2,6,6-tetramethyl-3,5-heptadionato)copper (II)
  S. Mukhopadhyay, K. Shalini, A. Devi, S. A. Shivashankar,
  Bull. Mater. Sci. 2002, 25, 391

• Synthesis of nano-scale TiO2 particles by non-hydrolytic approach
  H. Parala, A. Devi, R. Bhakta, R. A. Fischer,
  J. Mater. Chem. 2002, 12, 1625

• Morphology controlled growth of arrays of GaN nanopillars and randomly distributed GaN nanowires on sapphire using (N₃)₂Ga[(CH₂)₃NMe₂)] as a single molecule precursor
  A. Wohlfart, A. Devi, E. Maile, R. A. Fischer,
  Chem. Comm. 2002, 9, 998

• MOCVD of aluminium oxide films using aluminium ß-diketonates as precursors
  A. Devi, S. A. Shivashankar, A.G. Samuelson,
  J. Phys. IV 2002, 12, 139

• Strongly oriented thin films of Co₃O₄ deposited on single crystal MgO(100) by low-pressure, low-temperature MOCVD
  A. U. Mane, K. Shalini, A. Devi, S. A. Shivashankar,
  J. Cryst. Growth 2002, 240, 157

• Metalorganic chemical vapor deposition of Cu films from bis(t-butyl-3-oxo-butanato(copper (II): Thermodynamic investigation and experimental verification
  S. Mukhopadhyay, K. Shalini, R. Lakshmi, A. Devi, S. A. Shivashankar,
  Surface and Coatings Technology 2002, 150, 205

Publications 2001

• Investigations on InN Whiskers grown by Chemical Vapor Deposition
  H. Parala, A. Devi, F. Hipler, E. Maile, A. Birkner, Hans W. Becker, R. A. Fischer,
  J. Cryst. Growth 2001, 231, 68

• Nanosized GaN Particles by Chemical Vapor Infiltration
  H. Parala, A. Devi, A. Birkner, R. A Fischer,
  Proc. Electrochem. Soc. 2001, 13, 429

• Indium Nitride Whisker Growth by Chemical Vapor Deposition
  H. Parala, A. Devi, F. Hipler, A. Birkner, R. A. Fischer,
  Proc. Electrochem. Soc. 2001, 13, 356

• Growth of porous columnar alpha-GaN layers on c-plane Al₂O₃ by MOCVD using Bisazido dimethylaminopropyl gallium as single source precursor
  A. Wohlfart, A. Devi, F. Hipler, H. W. Becker, R. A. Fischer,
  J. Phys. IV 2001, 11, 683

• An Efficient Chemical Solution Deposition Method for Epitaxial GaN layers using Single Molecule Precursor
  H. Parala, A. Devi, A. Wohlfart, M. Winter, R. A. Fischer,
  Adv. Functional Mater. 2001, 11, 224

• Chemical Vapor Deposition of Copper using Copper(II) Amino Alkoxides
  R. Becker, J. Weiß, A. Devi, R. A. Fischer,
  J. Phys. IV 2001, 11, 569

• Synthesis of GaN Particles in Porous Matrices by Chemical Vapor Infiltration of Single Molecule Precursors
  H. Parala, A. Devi, W. Rogge, A. Birkner, R. A. Fischer,
  J. Phys. IV 2001, 11, 473

• Growth of InN Whiskers From Single Source Precursors
  A. Devi, H. Parala, A. Wohlfart, A. Birkner, R. A. Fischer,
  J. Phys. IV 2001, 11, 577

• A study of nucleation and growth in MOCVD: The growth of thin films of Alumina
  M. P. Singh, S. Mukhopadhyay, A. Devi, S. A. Shivashankar,
  Mater. Res. Soc. Symp. Proc. 2001, 648, P6.47

Publications 2000

• Growth Kinetics and Mechanistic Studies of GaN Thin Films Grown by OMVPE using (N₃)₂Ga[(CH₂)₃NMe₂] as Single Source Precursor
  A. Wohlfart, A. Devi, W. Rogge, R. A. Fischer, M. D. Allendorf, C. F. Melius,
  Proc. Electrochem. Soc. 2000, 13, 697

• CVD of Thin Films of Copper and Cobalt from Different Precursors: Growth Kinetics and Microstructure
  A. Mane, K. Shalini, A. Devi, R. Lakshmi, M. S. Dharmaprakash, M. Paranjape, S. A. Shivashankar,
  Mat. Res. Soc. Symp. Proc. 2000, 614, G6.11.1

• Precursor Chemistry of Group-III Nitrides XVI: Synthesis and Structure of Monomeric Penta Coordinated Intramolecularly Adduct Stabilized Amidobisazides of Aluminium, Gallium and Indium with and all Nitrogen Coordination Sphere: OMCVD of GaN using (N₃)₂Ga{N[CH₂CH₂(NEt₂)]₂}
  H. Sussek, O. Stark, A. Devi, H. Pritzkow, R. A. Fischer,
  J. Organomet. Chem. 2000, 602, 29

• A Study on Bisazido(dimethylaminopropyl)gallium as Precursor for OMVPE of Gallium Nitride in a Cold Wall Reactor System at Reduced Pressure
  A. Devi, W. Rogge, A. Wohlfart, F. Hipler, H. W. Becker, R. A. Fischer,
  Chem. Vap. Deposition 2000, 6, 245

• Growth Kinetics of GaN Thin Films Grown by MOVPE Using Single Molecule Precursors
  R. A. Fischer, A. Wohlfart, A. Devi, W. Rogge,
  Mater. Res. Soc. Internet J. Nitride Semicond. Res. 2000, 5, U136

• Epitaxy, Disperse Powders and Colloids of Gallium Nitride achieved by transformation of single source precursors
  H. Winkler, A. Devi, A. Manz, A. Wohlfart, W. Rogge, R. A. Fischer,
  Physica Status Solidi A 2000, 177, 27

• Precursor Chemistry for OMVPE of Group-13 Nitrides
  R. A. Fischer, A. Devi,
  Developments in Crystal Growth Research 2000, 2, 61

Publications 1999

• Molecular Precursors to Group-13 Nitrides, 14: Synthesis and Structures of (N₃)₂Ga[(CH₂)₃NMe₂], (N₃)Ga[(CH₂)₃NMe₂]₂ and (N₃)₃Ga(NR₃) (R= CH₃, C₂H₅)
  A. Devi, H. Sussek, H. Pritzkow, M. Winter, R. A. Fischer,
  Eur. J. Inorg. Chem. 1999, 12, 2127

• OMVPE of GaN using (N3)2Ga[(CH2)3NMe2] (BAZIGA) in a Cold Wall Reactor
  A. Devi, W. Rogge, R. A. Fischer, F. Stowasser, H. W. Becker, J. Schaefer, J. Wolfrum,
  J. Phys. IV 1999, (P8) Part 2, 589

• Thermal Analysis of Metalorganic Complexes of Copper for Evaluation as CVD Precursors
  A. Devi, S. A. Shivashankar,
  J. Therm. Anal. Calorim. 1999, 55, 259

Publications 1998

• Thermal Chemical Vapor Deposition of Copper Films from Copper Ethylacetoacetate: Microstructure and Electrical Resistivity
  A. Devi, S. A. Shivashankar,
  J. Mater. Sci. Lett. 1998, 17, 367

• A novel Cu (II) precursor for CVD: Synthesis, Characterization and Application
  A. Devi, J. Goswami, L. Raghunathan, S. A. Shivashankar, S. Chandrasekaran,
  J. Mater. Res. 1998, 13, 687

Publications 1996

• Low-Temperature Structure of Two Copper Based Precursors for MOCVD: Bis(tert-butyl acetoacetato)aquo Copper(II) and Bis(dipivaloylmethanato) Copper(II)
  S. Pattnaik, T. N. Guru Row, L. Raghunathan, A. Devi, J. Goswami, S. A. Shivashankar, S. Chandrasekaran, W. T. Robinson,
  Acta Cryst. C 1996, 52, 89

• Chemical Vapor Deposition of Thin Films of Copper Using a New Metalorganic Precursor
  J. Goswami, L. Raghunathan, A. Devi, S. A. Shivashankar, S. Chandrasekaran,
  J. Mater. Sci. Lett. 1996, 15, 573

Publications 1995

• Thermal Investigations on Single Bimetallic Precursors for MOCVD of Ferroelectric Oxide Thin Films
  M. M. A. Sekar, A.G.Samuelson, A. Devi, S. A. Shivashankar,
  Proceedings of the 10th National Symposium on Thermal Analysis 1995, 139

• Evaluation by Thermal Analysis of Metalorganic Precursors for Chemical Vapor Deposition of Thin Films of Copper
  A. Devi, R. Lakshmi, J. Goswami, S. A. Shivashankar and S. Chandrasekaran,
  Proceedings of the 10th National Symposium on Thermal Analysis 1995, 117

Publications 1994

• Comparison of Growth and Microstructure of Copper Films deposited from different Cu(II) Precursors
  J. Goswami, S. A. Shivashankar, L. Raghunathan, A. Devi, K. V. Ramanathan,
  Mater. Res. Soc. Symp. Proc. 1994, 337, 691