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We have enlarged the library of low temperature PEALD process for HfO2 using new Hf precursors. This work is an outcome of the joint collaboration between the IMC and MST teams of RUB within framework of the BMBF FlexTMDSense and DFG-FlexMOS projects. The influence of plasma and precursors on the properties of HfO2 layers were studied which confirms that precursors and plasma can be used as tools to modulate material properties. More about these interesting results can be read here.